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35PD300-ST
Application:
All Purpose InGaAs p-i-n Photodiode

Description:
The 35PD300-ST, an InGaAs photodiode with a 300µm-diameter photosensitive region packaged in a TO-46 header and actively aligned in a AT&T 'ST' active device mount. This device is one of ANADIGICS' most versatile optoelectronic components designed for applications in high sensitivity instrumentation, and moderate-bit-rate fiberoptic communications. Planar semiconductor design and dielectric passivation provide superior performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200°C, 15 hours, Vr = 20V). Devices with enhanced responsivity at 850nm are available.

Features:

  • Planar Structure
  • Dielectric Passivation
  • 100% Purge Burn-in
  • High Responsivity

    • Specifications
    Operating Voltage Max -15
    Dark Current nA Typ 1
    Dark Current nA Max 10
    Capacitance pF Typ 4
    Capacitance pF Max 12
    Responsivity A/W Min 0.75
    Responsivity A/W Typ 0.9
    Rise/Fall ns Max 3
    Frequency Response GHz Typ 300
    Backreflection (STD) dB Typ -15
    Backreflection (-LBR) dB Typ -45
    (w/FC/APC)