Application:
All Purpose InGaAs p-i-n Photodiode
Description:
The 35PD300-TO, an InGaAs photodiode with a 300µm-diameter
photosensitive region packaged in a TO-46 header. This device
is one of Telcom Devices' most versatile optoelectronic components,
with applications in high sensitivity instrumentation, laser
back-facet monitoring, and moderate-bit-rate telecomm and
datacomm transmission.. Planar semiconductor design and dielectric
passivation provide superior noise performance. Reliability
is assured by hermetic sealing and 100% purge burn-in (200°C,
15 hours, Vr = 20V). Headers are available with either a lensed
or flat window cap. Chips can also be attached and wire bonded
to customer-supplied or other specified packages.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
|
| Operating Voltage Max |
-15
|
| Dark Current nA Typ |
-
|
| Dark Current nA Max |
10
|
| Capacitance pF Typ |
4
|
| Capacitance pF Max |
-
|
| Responsivity A/W Min |
0.75
|
| Responsivity A/W Typ |
0.9
|
| Rise/Fall ns Max |
3
|
| Frequency Response GHz Typ |
-
|
| Backreflection (STD) dB Typ |
-
|
| Backreflection (-LBR) dB Typ |
-
|
|
