Application:
All Purpose InGaAs p-i-n Photodiode
Description:
The 35PD300LDC-S, an InGaAs photodiode with a 300µm-diameter
photosensitive region mounted on a metallized ceramic substrate,
is a low-dark-current version of the 35PD300. This device
is one of Telcom Devices' most versatile optoelectronic components,
with applications in high sensitivity instrumentation, laser
back-facet monitoring, and moderate-bit-rate telecomm and
datacomm transmission. Planar semiconductor design and dielectric
passivation provide superior noise performance. Reliability
is assured by 100% purge burn-in (200°C, 15 hours, Vr
= 20V). Chips can also be attached and wire bonded to customer-supplied
or other specified submounts.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
|
Operating Voltage Max |
-15
|
Dark Current nA Typ |
-51
|
Dark Current nA Max |
-
|
Capacitance pF Typ |
4
|
Capacitance pF Max |
12
|
Responsivity A/W Min |
0.7
|
Responsivity A/W Typ |
0.9
|
Rise/Fall ns Max |
3
|
Frequency Response GHz Typ |
-
|
Backreflection (STD) dB Typ |
-
|
Backreflection (-LBR) dB Typ |
-
|
|