Application:
All Purpose InGaAs p-i-n Photodiode
Description:
The 35PD300LDC-ST, -SMA, -FC, -SC, an InGaAs photodiode with
a 300µm-diameter photosensitive region packaged in a
TO-46 header and actively aligned in a AT&T ST active
device mount, is a low-dark-current version of the 35PD300.
This device is one of Telcom Devices' most versatile optoelectronic
components designed for applications in high sensitivity instrumentation,
and moderate-bit-rate fiberoptic communications. Planar semiconductor
design and dielectric passivation provide superior performance.
Reliability is assured by hermetic sealing and 100% purge
burn-in (200°C, 15 hours, Vr = 20V). Devices with enhanced
responsivity at 850 nm are available.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
|
| Operating Voltage Max |
-15
|
| Dark Current nA Typ |
-
|
| Dark Current nA Max |
0.51
|
| Capacitance pF Typ |
4
|
| Capacitance pF Max |
12
|
| Responsivity A/W Min |
0.7
|
| Responsivity A/W Typ |
0.9
|
| Rise/Fall ns Max |
300
|
| Frequency Response GHz Typ |
-
|
| Backreflection (STD) dB Typ |
-
|
| Backreflection (-LBR) dB Typ |
-
|
|
