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35PD3M-TO
Application:
Large Area InGaAs p-i-n Photodiode

Description:
The 35PD3M-TO, an InGaAs photodiode with a 3mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in high sensitivity instrumentation and sensing. Devices are hermetically sealed. Class A devices feature very low dark current and high dynamic impedance. High reliability is achieved through planar semiconductor design and dielectric-passivation. Chips can also be attached and wire bonded to customer-supplied or other specified packages.

35PD2M-TO

Features:

  • Planar Structure
  • Dielectric Passivation
  • 100% Purge Burn-in
  • High Responsivity

    Related Information

    Other information:

    Custom packaging is also available.

    • Specifications
    Operating Voltage Max -
    Dark Current -0.3V Typ -
    Responsivity 1300nm A/W Typ -
    Responsivity 1550nm ns Typ 1
    Rise/Fall Typ 175 (Typ)
    Dynamic Impedance Class A Typ -
    Dynamic Impedance Class B Typ -