Application:
Large Area InGaAs p-i-n Photodiode
Description:
The 35PD500-S, an InGaAs photodiode with a 500µm-diameter
photosensitive region mounted on a metallized ceramic substrate,
is a versatile device with applications in high sensitivity
instrumentation, laser back-facet monitoring, and low-bit-rate
telecomm and datacomm transmission. Planar semiconductor design
and dielectric passivation provide superior noise performance.
Reliability is assured by 100% purge burn-in (200°C, 15
hours, Vr = 20V). Chips can also be attached and wire bonded
to customer-supplied or other specified submounts.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
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Related Information
Other information:
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Custom packaging is also available. |
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| Operating Voltage Max |
-10
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| Dark Current -0.3V Typ |
-
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| Responsivity 1300nm A/W Typ |
0.8
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| Responsivity 1550nm ns Typ |
1
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| Rise/Fall Typ |
3
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| Dynamic Impedance Class A Typ |
-
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| Dynamic Impedance Class B Typ |
-
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