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35PD5M-TO
Application:
Large Area InGaAs p-i-n Photodiode

Description:
The 35PD5M-TO series of InGaAs photodiodes has a 5mm-diameter photosensitive region. Applications include high sensitivity instrumentation and sensing. Class A devices feature very low dark current and high dynamic impedance. High reliability is assured through planar, dielectric-passivated design, and hermetic packaging in TO-8 headers. Chips can also be attached and wire bonded to customer-supplied or other specified packages.

35PD5M-TO

Features:

  • Planar Structure
  • Dielectric Passivation
  • 100% Purge Burn-in
  • High Responsivity

    • Specifications
    Operating Voltage Max -
    Dark Current -0.3V Typ 0.1
    Responsivity 1300nm A/W Typ 0.9
    Responsivity 1550nm ns Typ 1.0
    Rise/Fall Typ 1.2
    Dynamic Impedance Class A Typ 100
    Dynamic Impedance Class B Typ 10