models are available for the following Schottky diodes:

• HSMS-280x series
• HSMS-281x series
• HSMS-282x series
• HSMS-285x series
• HSMS-286x series
• HSMS-820x series
• HSCH-53xx series
• HSCH-9161
• HSCH-9xx1 series
• 5082-2803series
• 5082-2811 series

SPICE model

The parameters are for a single diode (HSMS-2800). Parameters also apply to the individual diodes within multiple diode configurations.

SPICE model

The parameters are for a single diode (HSMS-2810). Parameters also apply to the individual diodes within multiple diode configurations.

SPICE model

Hewlett-Packard is tracking the mean and standard deviation for five key SPICE parameters for this diode. They are n (ideality factor), IS (saturation current), RS (series resistance), CJO (junction capacitance at zero reverse voltage and 1 MHz) and BV (breakdown voltage).

Measurements are made on 20 samples, randomly selected, from each lot manufactured and the mean and standard deviation data are obtained and stored. The data shown below are the mean of the mean values of all lots manufactured since November, 1996 and the standard deviation is that for the mean values of all such lots.

The parameters are for a single diode (HSMS-2820). Parameters also apply to the individual diodes within multiple diode configurations.

SPICE model, Cumulative Data to Jan, 1997

parameter	units	nominal	mean	std. dev.	% std. dev.
BV (Vbr)	V	9	26.7	1.02	3.8%
CJO	pF	0.7	0.649	0.04	6.1%
EG	eV	0.69	-	-	-
IBV	A	10E-4	-	-	-
IS	A	2.2E-8	1.48E-8	3.84E-9	25.9%
N	-	1.08	1.067	0.008	0.7%
RS	ohms	5	7.8	0.79	10.1%
PB (Vj)	V	0.56	-	-	-
PT (XTI)	-	2	-	-	-
M	-	0.5	-	-	-

In certain applications, the degree of match between two or four diodes in the same package is of importance. The automatic equipment used at HP to assemble Schottky dice into plastic packages selects chips from adjacent sites on the wafer, thus insuring the highest degree of match. Twenty HSMS-2825 diode pairs from one lot were measured and their five key SPICE parameters extracted. Listed below are the mean value for all 40 diodes, the mean D or difference between the two diodes in a package and this difference expressed as a percent of the mean value.

Note that the mean values listed below are slightly different from those given in the table above since they represent a single lot of diodes. The majority of D for CJO is due to the inability to measure capacitance in picofarads to three decimal places.

Diode Pair Data

parameter	units	mean value	mean D	D as %
BV (Vbr)	V	26.6	0.13	0.24%
CJO	pF	0.74	0.018	1.2%
IS	A	2.42E-8	1.79E-9	3.7%
N	-	1.079	0.0084	0.39%
RS	ohms	7.6	0.04	0.30%

parameter	units	value
Lp (Vbr)	nH	2
Cp	pF	0.08
Rs	ohm	25
Rj	ohm	(8.33E-5)(1.06)(Temp in Kelvin) (3E-6 + I bias in A)
Cj	pF	0.18

SPICE model

The parameters are for a single diode (HSMS-2850). Parameters also apply to the individual diodes within multiple diode configurations.

parameter	units	value
Lp (Vbr)	nH	2
Cp	pF	0.08
Rs	ohm	5
Rj	ohm	(8.33E-5)(1.08)(Temp in Kelvin) (5E-8 + I bias in A)
Cj	pF	0.18

SPICE model

The parameters are for a single diode (HSMS-2860). Parameters also apply to the individual diodes within multiple diode configurations.

parameter	units	1 mA self bias	2.5 mA self bias
Lp1	nH	1.0	1.0
Lp2	nH	1.3	1.3
Cp	pF	0.08	0.08
Rs	ohm	6	6
Rj	ohm	263	142
Cj	pF	0.17	0.17

SPICE model

The parameters are for a single diode (HSMS-8101). Parameters also apply to the individual diodes within multiple diode configurations.

SPICE model

SPICE model

Equivalent Circuit model

HSCH-5314

parameter	units	1.0 mA self bias	1.5 mA self bias	3.0 mA self bias	20 uA DC bias	50 uA DC bias	150 uA DC bias
Rs	ohm	5.0	5.2	5.0	2.8	4.7	2.7
Rj	ohm	393	232	150	1240	618	211
Cj	pF	0.11	0.11	0.12	0.11	0.12	0.13

HSCH-5318

parameter	units	1.0 mA self bias	1.5 mA self bias	3.0 mA self bias	20 uA DC bias	50 uA DC bias	150 uA DC bias
Rs	ohm	5.1	5.0	5.0	5.1	3.9	4.7
Rj	ohm	244	178	109	2050	665	242
Cj	pF	0.16	0.16	0.19	0.18	0.19	0.20

HSCH-5340

parameter	units	1.0 mA self bias	20 uA DC bias	50 uA DC bias	150 uA DC bias
Rs	ohm	11	11	11	11
Rj	ohm	267	1400	560	187
Cj	pF	0.11	0.09	0.09	0.10

SPICE models

parameter	units	-5316 -5318	-5312 -5314 -5512	-5310	-5330 -5340 -5531	-5336 -5332
BV	V	5	5	5	5	5
CJO	pF	0.2	0.13	0.09	0.09	0.13
EG	eV	0.69	0.69	0.69	0.69	0.69
IBV	A	10E-5	10E-5	10E-5	10E-5	10E-5
IS	A	3E-10	3E-10	3E-10	4E-8	4E-8
N	-	1.08	1.08	1.08	1.08	1.08
RS	ohms	5	9	13	113	9
PB (Vj)	V	0.65	0.65	0.65	0.5	0.5
PT (XTI)	-	2	2	2	2	2
M	-	0.5	0.5	0.5	0.5	0.5

Equivalent Circuit model

parameter	units	bias=-4 V	bias = 0 V	bias = +0.1 V	bias = +0.5 V
Lp	nH	0.30	0.30	0.30	0.30
Cp	pF	0.011	0.011	0.011	0.011
Rs	ohm	20	20	20	20
Rj	ohm	440	3000	277	34
Cj	pF	0.019	0.035	0.027	0.034

SPICE model

Because of the high leakage of this diode under reverse bias, it must be modeled as an anti-parallel pair. D1 represents the characteristic of the HSCH-9161 under forward bias and D2 (in the forward direction) gives the V-I curve of the HSCH-9161 under reverse bias..

SPICE model

The parameters are for a single diode (HSCH-9101 or HSCH-9201). Parameters also apply to the individual diodes within multiple diode configurations.