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HSMP-380x series

low current PIN diode

 
CT = 0.35 pF, Rs@100 mA = 2.5omega, tau = 1800 nsec, fc = 88 kHz
applications: low current attenuators

available configurations
part number
package
connection
data sheet
FAXback
HSMP-3800
SOT-23
single
pkg dwg
pdf
pdf
button
55332
HSMP-3802
SOT-23
series pair
pkg dwg
pdf
pdf
button
55332
HSMP-3804
SOT-23
common cathode pair
pkg dwg
pdf
pdf
button
55332
HPND-0001
die

pkg dwg
pdf
pdf
button
53832
1N5767
glass
pkg dwg
pdf
pdf
button
13657
5082-3080
glass
pkg dwg
pdf
pdf
button
13657


HSMP-380x Model

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SPICE model

SPICE models are not available for HP PIN diodes as SPICE does not model carrier lifetime, a critical parameter for PIN diodes

APLAC Limited PIN Diode Model

The APLAC model predicts the RF resistance of a PIN diode chip under all bias conditions, and is based on the article SPICE CIRCUIT YIELDS RECIPE FOR PIN DIODE, Joe Walston, Microwaves & RF - November 1992.

APLAC MODEL LIMITATIONS:
Caution!
  • The model can be used to predict the r.f. resistance and forward voltage. It does not give predictions of distortion.
  • A PIN diode only behaves reliably as a variable resistor at frequencies above 10fc, where fc = 1/2pt and t is the minority carrier lifetime.
  • The capacitance of a PIN diode does vary with the reverse voltage applied however the APLAC model only allows a fixed value.
  • APLAC uses carrier lifetime (t) as an approximation for transit time (TT).

HSMP-380x Limited APLAC Model

D1 uses the standard SPICE diode model, and is described by Is, N, and TT. Rs in the standard model is replaced by the external network of Rmin, Rmax, and Rvar. The parameters are for a single diode (HSMP-3800). Parameters also apply to the individual diodes within multiple diode configurations.

schematic

parameter

unitsdescriptionvalue
Rmaxohmmaximum r.f. resistance10000
Rminohmminimum r.f. resistance2
K-resistance curve fitting exponent1.015
A-resistance curve fitting constant0.0434
LnHconnection inductance2
CpFdiode capacitance at r.f. frequency0.3
IsAdiode saturation current3.5E-9
N-diode ideality factor2.062
TTnsectransit time (carrier lifetime)1800


Applications Literature

General Information
As Attenuators
Assembly Information
Reliability Information

 

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