|
8V, 10mA, 2 GHz: NF = 1.6 dB, Ga = 14.5 dB
8V, 25mA, 2 GHz: P1dB = +19 dBm, G1dB = 15 dB
| part number |
NFo at 2 GHz |
Gp at 2 GHz |
configuration |
package |
data sheet |
|
 |
| AT-41400 |
1.6 dB typ 8V, 10 mA |
14.5 dB typ 8V, 10 mA |
chip |
 |
 pdf |
|
| |
| AT-41410 |
1.6 dB typ 1.9 dB max 8V, 10 mA |
14.5 dB typ 13.0 dB min 8V, 10 mA |
100 mil ceramic |
 |
 pdf |
|
| |
| AT-41411 |
1.4 dB typ @ 1 GHz 8V, 10 mA |
|S21| at 1 GHz 14.5 dB min 8V, 10 mA |
SOT-143 |
 |
 pdf |
|
| |
| AT-41435 |
1.7 dB typ 2.0 dB max 8V, 10 mA |
14.0 dB typ 13.0 dB min 8V, 10 mA |
micro-x |
 |
 pdf |
|
| |
| AT-41470 |
1.6 dB typ 1.9 dB max 8V, 10 mA |
14.5 dB typ 13.0 dB min 8V, 10 mA |
70 mil ceramic |
 |
 pdf |
|
| |
| AT-41485 |
1.4 dB typ 1.8 dB max @ 1 GHz 8V, 10 mA |
18.5 dB typ 17.5 dB min @ 1 GHz 8V, 10 mA |
85 mil plastic |
 |
 pdf |
|
| |
| AT-41486 |
1.4 dB typ 1.8 dB max @ 1 GHz 8V, 10 mA |
18.0 dB typ 17.0 dB min @ 1 GHz 8V, 10 mA |
SMT 85 mil plastic |
 |
 pdf |
|
packages: 00 10 11 35 70 85 86
SPICE model
* DIE MODEL (excludes bond wires)
.SUBCKT AT414 75 20 85
CCB 20 60 .032PF
DCD1 20 60 DMOD 782
RRB1 20 25 1.0 TC=0.8E-3
DCD2 25 60 DMOD 629
RRB2 25 30 3.1 TC=1.2E-3
DCD3 30 60 DMOD 365
RRB3 30 35 2.7 TC=1.8E-3
RRC 60 75 5 TC=0.6E-3
RRE 80 85 .24 TC=0.6E-3
CCE 60 85 .032PF
QINT 60 35 80 QDIS 420
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53,
+ BV=45, IBV=1E-9)
.MODEL QDIS NPN (BF=100, BR=5, IS=1.65E-18, VA=20,
+ TF=12PS, CJE=1.8E-15, VJE=1.01, MJE=0.6,
+ PTF=35, XTB=1.818, VTF=6, ITF=3E-4,
+ IKF=1E-4, XTF=4, NF=1.03, ISE=5E-15, NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
|
| file name | description | |
| t414008a.s2p | AT-41400 s and noise parameters at 8 V 10 mA |  view |
| t414008b.s2p | AT-41400 s parameters at 8 V 25 mA |  view |
| t414108a.s2p | AT-41410 s and noise parameters at 8 V 10 mA |  view |
| t414108b.s2p | AT-41410 s aparameters at 8 V 25 mA |  view |
| t414118a.s2p | AT-41411 s and noise parameters at 8 V 10 mA |  view |
| t414118b.s2p | AT-41411 s parameters at 8 V 25 mA |  view |
| t414358a.s2p | AT-41435 s and noise parameters at 8 V 10 mA |  view |
| t414358b.s2p | AT-41435 s parameters at 8 V 25 mA |  view |
| t414708a.s2p | AT-41470 s and noise parameters at 8 V 10 mA |  view |
| t414708b.s2p | AT-41470 s parameters at 8 V 25 mA |  view |
| t414858a.s2p | AT-41485 s and noise parameters at 8 V 10 mA |  view |
| t414858b.s2p | AT-41485 s parameters at 8 V 25 mA |  view |
| t414868a.s2p | AT-41486 s and noise parameters at 8 V 10 mA |  view |
| t414868b.s2p | AT-41486 s parameters at 8 V 25 mA |  view |
Applications Literature |
[ top ] |
General Information about Bipolar Junction Transistors
Information about AT-4 Series Transistors
Assembly Information
|