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Spec. SG
amp: freq
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osc: freq
osc: Pout
osc: PN
bias: Voltage
bias: Current
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Transistor Specification Selection Guide
 
Frequency Range
as an Amplifier
 
 
 Bipolar Transistors
 AT-332xx space
space space   0.5-1 GHz
space
 AT-364xx space
space space   0.5 -1 GHz
space
 AT-316xx space
space   to 1 GHz
space
 AT-380xx space
space   to 2.5 GHz
space
 AT-415xx space
space   to 3 GHz
space
 AT-420xx space
space   to 3 GHz
space
 AT-640xx space
space   to 4 GHz
space
 AT-305xx space
space   to 4 GHz
space
 AT-310xx space
space   to 4 GHz
space
 AT-320xx space
space   to 4 GHz
space
 AT-414xx space
space   to 5 GHz
space
 HBFP-0420 space
space   to 8 GHz
space
 HBFP-0405 space
space   to 10 GHz
space
0.1 0.2 0.5 1.0 2.0 5.0 10  
  Frequency [GHz]  
                                                                                                 
 Field Effect Transistors
 ATF-44xxx space
space MESFET   space   1-6 GHz
space
 ATF-45xxx space
space space   1-8 GHz
space
 ATF-21xxx space
space space   0.5-8 GHz
space
 ATF-46xxx space
space space   1-10 GHz
space
 ATF-10xxx space
space space   0.5-12 GHz
space
 ATF-13xxx space
space space   1.5-15 GHz
space
 ATF-26xxx space
space space   2-18 GHz
space
 ATF-36xxx space
spacePHEMT   space 1.5-20+
space
0.1 0.2 0.5 1.0 2.0 5.0 10 20  
  Frequency [GHz]  
                                                                                                 

What:
The portion of the radio spectrum over which the transistor has useful performance (as an amplifier). A common definition of "useful" is greater than 6 dB of gain.

Direction:
needs to be sufficient to meet application, but not excessive.
Excessive margin in frequency range usually means more attention needs to be paid to stability when designing, and may make the design considerably more difficult.

Range:
1 MHz to 4 GHz for most BJTs
100 MHz to 6, 12 or 18 GHz for MESFETs
500 MHz to greater than 20 GHz for PHEMTs

The lower ends of these ranges are not dictated by electrical performance. At lower frequencies, other technologies are far more cost effective. Also, transistor impedances become open-circuit-like at low frequencies, making design more difficult. Devices may not be characterizzed at these lower frequencies.
It may not be cost effective to use high frequency analog transistors for applications below 100 MHz.
It can be extremely difficult to match to MESFETs or PHEMTs below 500 MHz, as these devices have open-circuit like impedances at these frequencies; additionally the broad range over which the product has gain makes designing a stable amplifier somewhat challenging.


 
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