• PN4416
• PN4416A
 

Model of PN4416 (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: PN4416.PRM Date: sep 1992 * .MODEL PN4416 NJF + VTO = -3.5534E+000 + BETA = 7.92667E-004 + LAMBDA = 1.84696E-002 + RD = 7.67130E+000 + RS = 7.67130E+000 + IS = 3.33412E-016 + CGS = 2.92000E-012 + CGD = 2.26140E-012 + PB = 1.09077E+000 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for PN4416 Jan 1993 Version 1.0 1) VTO = -3.553 Volt 2) BETA = 792.6 u Amp/V2 3) LAMBDA = 18.46 m 1/Volt 4) RD = 7.671 Ohm 5) RS = 7.671 Ohm 6) IS = 333.4 a Amps 7) CGSO = 2.920 p Farad 8) CGDO = 2.261 p Farad 9) PB = 1.090 Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value  

Model of PN4416A (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: PN4416A.PRM Date: sep 1992 * .MODEL PN4416A NJF + VTO = -3.5534E+000 + BETA = 7.92667E-004 + LAMBDA = 1.84696E-002 + RD = 7.67130E+000 + RS = 7.67130E+000 + IS = 3.33412E-016 + CGS = 2.92000E-012 + CGD = 2.26140E-012 + PB = 1.09077E+000 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for PN4416A Jan 1993 Version 1.0 1) VTO = -3.553 Volt 2) BETA = 792.6 u Amp/V2 3) LAMBDA = 18.46 m 1/Volt 4) RD = 7.671 Ohm 5) RS = 7.671 Ohm 6) IS = 333.4 a Amps 7) CGSO = 2.920 p Farad 8) CGDO = 2.261 p Farad 9) PB = 1.090 Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value