• BF410A
• BF410B
• BF410C
• BF410D
 

Model of BF410A (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: BF410A.PRM Date: sep 1992 * .MODEL BF410A NJF + VTO = -8.8094E-001 + BETA = 2.01845E-003 + LAMBDA = 1.50475E-002 + RD = 3.57223E+000 + RS = 3.57223E+000 + IS = 1.05515E-013 + CGS = 2.80000E-012 + CGD = 4.27000E-012 + PB = 6.18391E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for BF410A Sep 1992 Version 1.0 1) VTO = -880.9 m Volt 2) BETA = 2.018 m Amp/V2 3) LAMBDA = 15.04 m 1/Volt 4) RD = 3.572 Ohm 5) RS = 3.572 Ohm 6) IS = 105.5 f Amps 7) CGSO = 2.800 p Farad 8) CGDO = 2.270 p Farad 9) PB = 618.3 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value  

Model of BF410B (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: BF410B.PRM Date: sep 1992 * .MODEL BF410B NJF + VTO = -1.9058E+000 + BETA = 1.54719E-003 + LAMBDA = 1.72995E-002 + RD = 3.06677E+000 + RS = 3.06677E+000 + IS = 7.02360E-014 + CGS = 4.18000E-012 + CGD = 2.37000E-012 + PB = 7.16850E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for BF410B Sep 1992 Version 1.0 1) VTO = -1.905 Volt 2) BETA = 1.547 m Amp/V2 3) LAMBDA = 17.29 m 1/Volt 4) RD = 3.066 Ohm 5) RS = 3.066 Ohm 6) IS = 70.23 f Amps 7) CGSO = 4.180 p Farad 8) CGDO = 4.370 p Farad 9) PB = 716.8 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value

 

Model of BF410C (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: BF410C.PRM Date: sep 1992 * .MODEL BF410C NJF + VTO = -2.3973E+000 + BETA = 1.31099E-003 + LAMBDA = 1.70958E-002 + RD = 3.03493E+000 + RS = 3.03493E+000 + IS = 5.66111E-014 + CGS = 3.42000E-012 + CGD = 2.68000E-012 + PB = 8.25674E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for BF410C Sep 1992 Version 1.0 1) VTO = -2.397 Volt 2) BETA = 1.311 m Amp/V2 3) LAMBDA = 17.09 m 1/Volt 4) RD = 3.034 Ohm 5) RS = 3.034 Ohm 6) IS = 56.61 f Amps 7) CGSO = 3.420 p Farad 8) CGDO = 2.680 p Farad 9) PB = 825.6 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value

 

Model of BF410D (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: BF410D.PRM Date: sep 1992 * .MODEL BF410D NJF + VTO = -3.1715E+000 + BETA = 1.22441E-003 + LAMBDA = 1.98434E-002 + RD = 2.61448E+000 + RS = 2.61448E+000 + IS = 3.88189E-014 + CGS = 5.40000E-012 + CGD = 4.08000E-012 + PB = 8.59053E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for BF410D Sep 1992 Version 1.0 1) VTO = -3.171 Volt 2) BETA = 1.224 m Amp/V2 3) LAMBDA = 19.84 m 1/Volt 4) RD = 2.614 Ohm 5) RS = 2.614 Ohm 6) IS = 38.81 f Amps 7) CGSO = 5.400 p Farad 8) CGDO = 4.080 p Farad 9) PB = 859.0 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value