Model of BF904WR (date: 8-1-00) Simulation Values * BF904WR SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS * ENVELOPE SOT343R * 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1; .SUBCKT BF904WR 1 2 3 4 L10 1 10 L=0.10N L20 2 20 L=0.34N L30 3 30 L=0.34N L40 4 40 L=0.34N L11 10 11 L=1.10N L21 20 21 L=1.10N L31 30 31 L=1.10N L41 40 41 L=1.10N C13 10 30 C=0.060P C14 10 40 C=0.060P C21 10 20 C=0.050P C23 20 30 C=0.070P C24 20 40 C=0.005P D11 11 41 ZENER D22 11 31 ZENER RSUB 10 12 R=10 MOS1A 61 41 11 12 GATE1 L=1.1E-6 W=1150E-6 MOS2A 21 31 61 12 GATE2 L=2.0E-6 W=1150E-6 MOS1B 71 41 11 12 GATE3 L=1.1E-6 W= 6E-6 MOS2B 41 31 71 12 GATE4 L=4.0E-6 W= 6E-6 .MODEL ZENER + D BV=10 CJO=0.6E-12 RS=10 .MODEL GATE1 + NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .MODEL GATE2 + NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=1.5E-12 CBS=0.5E-12 .MODEL GATE3 + NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=140E3 RS=400 RD=400 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12 .MODEL GATE4 + NMOS LEVEL=3 UO=600 VTO=+0.700 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=100E3 RS=400 RD=400 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.1E-12 CBS=0.1E-12 .ENDS BF904WR View this model
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