Information as of 2000-01-11
Latest information online
BF1105; BF1105R; BF1105WR; N-channel dual-gate MOS-FETs
Description |  |
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1105,
BF1105R and BF1105WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
Features |  |
- Short channel transistor with high
forward transfer admittance to input
capacitance ratio
- Low noise gain controlled amplifier
up to 1 GHz.
- Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
Applications |  |
- VHF and UHF applications with 5 V
supply voltage, such as television
tuners and professional
communications equipment.
Datasheet |  |
Products, packages, availability and ordering |  |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
Find similar products: |  |
BF1105; BF1105R; BF1105WR links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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