Information as of 2000-01-11
Latest information online
BF1201; BF1201R; BF1201WR; N-channel dual-gate PoLo MOS-FETs
Description |  |
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
Features |  |
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier
- Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
Applications |  |
- VHF and UHF applications with 3 - 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment.
Datasheet |  |
Products, packages, availability and ordering |  |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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BF1201; BF1201R; BF1201WR links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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