|
|
|
Information as of 2000-01-10
BLF245; VHF power MOS transistor
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (VGS)
groups are available on request.
Page count File size (kB) Datasheet
BLF245 links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category. |
Copyright © 2000 Royal Philips Electronics All rights reserved. Terms and conditions. |
|