Information as of 2000-01-10
Latest information online
BLS2731-10; Microwave power transistor
Description | |
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.
Features | |
- Suitable for short and medium pulse applications
- Internal input and output matching networks for an easy
circuit design
- Emitter ballasting resistors improve ruggedness
- Gold metallization ensures excellent reliability
- Interdigitated emitter-base structure provides high
emitter efficiency
- Multicell geometry improves power sharing and reduces
thermal resistance.
Applications | |
- Common base class-C pulsed power amplifier for radar
applications in the 2.7 to 3.1 GHz band.
Datasheet | |
Products, packages, availability and ordering | |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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