Information as of 2000-01-10
Latest information online
BLV93; UHF power transistor
Description |  |
N-P-N silicon planar epitaxial transistor primarily intended
for use in mobile radio transmitters in the 900 MHz
communications band.
Features |  |
 |
- multi-base structure and emitter-ballasting resistors for
an optimum temperature profile
- internal input matching to achieve an optimum wideband
capability and high power gain
- gold metallization ensures excellent reliability.
The transistor has a 6-lead flange envelope with a ceramic
cap (SOT-171). All leads are isolated from the flange.
Datasheet |  |
Products, packages, availability and ordering |  |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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