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![]() Information as of 2000-01-10
BLW33; UHF linear power transistor
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a 1/4" capstan
envelope with ceramic cap.
Page count File size (kB) Datasheet
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