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Information as of 2000-01-10
BLW76; HF/VHF power transistor
N-P-N silicon planar epitaxial
transistor intended for use in class-AB
or class-B operated high power
transmitters in the h.f. and v.h.f.
bands. The transistor presents
excellent performance as a linear
amplifier in the h.f. band. It is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Transistors are
delivered in matched hFE groups.
The transistor has a 1/2" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
Page count File size (kB) Datasheet
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