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Information as of 2000-01-10
BLW80; UHF power transistor
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
The transistor is housed in a 1/4"
capstan envelope with a ceramic cap.
Page count File size (kB) Datasheet
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