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Information as of 2000-01-10
BUK7514-55; TrenchMOSÔ transistor Standard level FET
N-channel enhancement mode standard level field-effect powertransistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switchingapplications.
Page count File size (kB) Datasheet
BUK7514-55 links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category. |
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