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Information as of 2000-01-10
BUK856-400 IZ; Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV.
Page count File size (kB) Datasheet
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