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Information as of 2000-01-10
BUK9120-48TC; PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
Protected N-channel enhancement mode logic level field-effect power
transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV and active drain voltage clamping. Temperature sensitive diodes are incorporated for monitoring chip temperature.
Page count File size (kB) Datasheet
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