Information as of 2000-01-10
 Latest information online 

LTE42012R; NPN microwave power transistor

• Description • Features • Applications • Datasheet • Products, packages, availability and ordering • Find similar products

To be kept informed on LTE42012R, subscribe to eNews.

Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Features

• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Input matching cell improves input impedance and allows an easier design of wideband circuits.

Applications

• Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
LTE42012R	NPN microwave power transistor	21-Feb-97	Product Specification	12	72	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
LTE42012R	9336 470 30114	Standard marking * trade pack	SOT440	RFS	-

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

Find similar products:

 LTE42012R links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.