Information as of 2000-01-10
Latest information online
LZ1418E100R; NPN microwave power transistor
Description | |
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the emitter
connected to the flange.
Features | |
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics
and excellent lifetime
- Multicell geometry gives good balance of dissipated
power and low thermal resistance
- Internal input and output prematching ensures good
stability and allows an easier design of wideband
circuits.
Applications | |
- Common emitter class A amplifiers in CW conditions for
military and professional applications between
1.4 to 1.8 GHz.
Datasheet | |
Products, packages, availability and ordering | |
Detailed discontinuation information Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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