Information as of 2000-01-10
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MX0912B351Y; NPN microwave power transistor

• Description • Features • Applications • Datasheet • Products, packages, availability and ordering • Find similar products

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Description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C.

Features

• Interdigitated structure; high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Input and output matching cell allows an easier design of circuits. Columns

Applications

Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
MX0912B351Y	NPN microwave power transistor	19-Feb-97	Product Specification	12	92	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
MX0912B351Y	9340 335 50114	Standard marking * trade pack	SOT439	RFS	-

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

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