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Information as of 2000-01-10
 Latest information online
MX0912B100Y; MZ0912B100Y; NPN microwave power transistors
| Description |  |
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NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange
package and improved output prematching cells. It is
recommended for new designs.
The MZ0912B100Y has a SOT443A metal ceramic flange
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.
| Features | |
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics
and excellent lifetime
- Multicell geometry improves power sharing and low
thermal resistance
- Input and output matching cell allows an easier design
of circuits.
| Applications | |
- Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.
| Datasheet | |
| Products, packages, availability and ordering | |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.
| Find similar products: | |
MX0912B100Y; MZ0912B100Y links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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