Information as of 2000-01-10
Latest information online
MZ0912B50Y; NPN microwave power transistor
Description |  |
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
Features |  |
- Interdigitated structure provides
high emitter efficiency
- Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
- Gold metallization realizes very
stable characteristics and excellent
lifetime
- Multicell geometry gives good
balance of dissipated power and
low thermal resistance
- Input and output matching cell
allows an easier design of circuits.
Applications |  |
Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.
Datasheet |  |
Products, packages, availability and ordering |  |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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