Information as of 2000-01-10
Latest information online
MZ0912B50Y; NPN microwave power transistor
Description | ![Go to the top of this page](../images/main/top.gif) |
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
Features | ![Go to the top of this page](../images/main/top.gif) |
- Interdigitated structure provides
high emitter efficiency
- Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
- Gold metallization realizes very
stable characteristics and excellent
lifetime
- Multicell geometry gives good
balance of dissipated power and
low thermal resistance
- Input and output matching cell
allows an easier design of circuits.
Applications | ![Go to the top of this page](../images/main/top.gif) |
Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.
Datasheet | ![Go to the top of this page](../images/main/top.gif) |
Products, packages, availability and ordering | ![Go to the top of this page](../images/main/top.gif) |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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MZ0912B50Y links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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