Information as of 2000-01-10
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PHB125N06LT; TrenchMOS Ô transistor Logic level FET

• Description • Features • Datasheet • Products, packages, availability and ordering • Find similar products

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Description

N-channel enhancement mode logic level field-effect power transistor in aplastic envelope suitable for surface mounting Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purposeswitching applications.

Features

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
PHB125N06LT	TrenchMOS Ô transistor Logic level FET	01-Dec-97	Product Specification	0	70	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
PHB125N06LT	9340 543 00118	Standard marking * reel pack, SMD, 13"	SOT404	RFS	-

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

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