Information as of 2000-01-10
Latest information online
RX1214B300Y; NPN microwave power transistor
Description | |
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package with the base
connected to the flange.
Features | |
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics
and excellent lifetime
- Multicell geometry improves power sharing and reduces
thermal resistance
- Internal input and output matching networks for an easy
circuit design.
Applications | |
- Common base class-C wideband amplifiers operating
under pulsed conditions, recommended for L-band
radar applications.
Datasheet | |
Products, packages, availability and ordering | |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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