1997-12-01 , E/DS-838/130

Since the launch of its TrenchMOS technology in the middle of 1996, Philips Semiconductors, the largest European semiconductor company, has developed an impressive range of N-channel power MOSFETs based on this advanced silicon process. Because the very low on-resistance of TrenchMOS power MOSFETs means that less power is dissipated, Philips Semiconductors is able to offer these devices in small surface- mount packages, giving equipment manufacturers the opportunity to reduce the size, weight and cost of their products.

Unlike other 'trench' FETs on the market, Philips Semiconductors' TrenchMOS devices feature on-resistances as low as 5 milliohms at gate voltages as low as 5 V. As a result, they can be directly driven by logic-level signals without the necessity for level shifting, bootstrapping or charge pump circuitry. "With the industry trend towards lower voltage systems, particularly in battery powered portable equipment such as mobile phones, PDAs and laptop computers, this gives Philips Semiconductors' TrenchMOS power MOSFETs a distinct advantage over the competition," said product marketing manager Phil Jones.

Philips Semiconductors' TrenchMOS power MOSFETs are available in two drain-source voltage (Vds) ratings, each one optimised for use in a different range of applications ( see spreadsheet). The 55-V range currently includes MOSFETs with maximum drain current (Ids) specifications between 5 A and 75 A and is intended for use in automotive, DC motor drive, power conversion and general-purpose switching applications. In particular, the BUK series has been engineered to meet the stringent reliability requirements of automotive systems.

By adopting a Vds rating of 30 V for TrenchMOS devices that are intended for lower- voltage applications such as power conversion in desk-top PCs and battery management in mobile phones and laptop computers, Philips Semiconductors has been able to reduce R ds(on) values to the point where power dissipation is so low that the devices can be packaged in ultra-small surface-mount packages. For example, the company's latest 30-V 10-A TrenchMOS power MOSFET is supplied in an SO8 package that occupies only 25 mm²of pc board area. Die sizes that are compatible with the SO8 package have already been produced with on-resistances as low as 11 milliohms.

TrenchMOS devices also have significantly lower Miller capacitance than equivalent DMOS types - reducing the switching losses that occur when they are operated at high

In total, Philips Semiconductors' range of TrenchMOS power MOSFETs currently includes over 100 different types. Many of these, both in the 30-V and 55-V ranges, are available in SOT223 (50 mm² pc board area), SOT428 (D-PAK equivalent, 80 mm² pc board area) or SOT404 (D²-PAK equivalent, 160 mm² pc board area) surface-mount packages, and nearly all are also available in TO220AB leaded packages. The wide range of surface-mount packages in which TrenchMOS FETs are available is indicative of Philips Semiconductors' leadership in matching R ds(on), die size and packaging technologies to provide low-cost, high-performance, space-saving solutions.

TrenchMOS power MOSFETs are designed and manufactured at Philips Semiconductors' facility in Hazel Grove, UK.

Philips Semiconductors, a division of Philips Electronics NV, headquartered in Eindhoven, The Netherlands, is the ninth largest semiconductor supplier in the world and the fourth largest supplier of discretes in the world. Philips Semiconductors' innovations in digital audio, video, and mobile technology position the company as a leader in the consumer, multimedia and wireless communications markets. Sales offices are located in all major markets around the world and are supported by systems labs.