Go to the CD home page
Newsroom
-News archive
-Press contacts
Newsletters & Articles
In focus
Subscribe to eNews
Shows & Events
Relevant Links
-Shows & Events
Relevant Links
-Sales & distribution offices

1998-09-29 , S/IC-2039/25
Product News From Philips Semiconductors

Philips Semiconductors introduces BiMOS3D process for improved disk drive performance at lower cost


Philips Semiconductors today announced the availability of its BiMOS3D process for the design of motion control integrated circuits (ICs) applied in hard disk drives (HDDs). Volume production of ICs using the mixed signal BiMOS3D technology is scheduled to begin in Q4 1999.

Combining high voltage lateral transistors with intelligent digital functions and analog power components in a single die, BiMOS3D is designed to improve performance and reduce overall system costs.

"The need to reduce device cost per device and optimize mass storage architecture has driven the development of BiMOS3D," said Arnaud Moser, business line marketing manager for motion control ICs. "BiMOS3D can handle high currents, while maintaining process functionality. Philips Semiconductors believes this process represents the best all-around option for HDD designers and manufacturers because of the combined digital intelligence and analog power processes on a single chip."

BiMOS3 produces a type of integrated circuit using both bipolar and CMOS technologies. Philips Semiconductors has been using BiMOS3 to produce the one-chip TV ICs, which have provided a significant performance increase and cost reduction to TV setmakers. The proven BiMOS3 process has been shipping in volume for two years and currently more than one in three TVs made in the world are based on Philips Semiconductors one-chip TV IC. While BiMOS3 provides 75 percent of the process required for motion control ICs, it does not address the high power requirements for HDD motion controls, hence the custom development of BiMOS3D. With BiMOS3D, the logic gates are primarily made of CMOS, but the output stages use lateral bipolar DMOS transistors to accommodate the high current, high voltage and high power requirements associated with controlling HDD disk and arm motors.

BiMOS3D specifications clearly identify the inherent power, speed, high integration and cost trade-offs that distinguish the process.

MAIN FEATURES OF BIMOS3D UNIT VALUE
Mask Count Ý 20
Density Digital Cells Gate/mm2 2700
CMOS Effective Gate Length µ 0.5
Bipolar Type V and LNPN, V and LPNP
HV CMOS Type ENMOS, EPMOS
LDMOS Power mOhm.mm2 <35
EN-EPMOS Power mOhm.mm2 <100
Vt LDMOS V 0.9
Diffused Resistance KOhm/sq 2,75
High Ohmic Poly Ohm/sq 220
Capacitor nF/mm2 3.86
Zener Diode V 5
BP/BN Isolation Ý YES
IMMUNITY Latch-up Very High
Ý Cross-Talk Very High
ESD PROTECTIONS Ý YES

Custom design-ins are underway with samples expected in Q2 1999. Volume production of BiMOS3D ICs is scheduled to begin in Q4 1999.

Philips Semiconductors, a division of Royal Philips Electronics, headquartered in Eindhoven, The Netherlands, is the ninth largest semiconductor supplier in the world and the third largest supplier of discretes in the world. Philips Semiconductors' innovations in digital audio, video, and mobile technology position the company as a leader in the consumer, multimedia and wireless communications markets. Sales offices are located in all major markets around the world and are supported by systems labs.

Copyright © 2000
Royal Philips Electronics
All rights reserved.
Terms and conditions.


Go to Philips Semiconductors' home page Philips home Feedback your comments and questions Go to semiconductors.com search / index