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			 Information as of 2000-01-10
 
				BFQ68; NPN 4 GHz wideband transistor 
 
  NPN transistor mounted in a four-lead
 dual-emitter SOT122A envelope with
 a ceramic cap. All leads are isolated
 from the stud. Diffused
 emitter-ballasting resistors and the
 application of gold sandwich
 metallization ensure an optimum
 temperature profile and excellent
 reliability properties. It features very
 high output voltage capabilities.
  
 It is primarily intended for final stages
 in MATV system amplifiers, and is
 also suitable for use in low power
 band IV and V equipment.  
 Page count File size (kB) Datasheet 
 
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