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			 Information as of 2000-01-10
 
				BLW32; UHF linear power transistor 
 
  N-P-N silicon planar epitaxial
 transistor primarily intended for use in
 linear u.h.f. amplifiers for television
 transmitters and transposers. The
 excellent d.c. dissipation
 properties for class-A operation are
 obtained by means of diffused emitter
 ballasting resistors and a multi-base
 structure, providing an optimum
 temperature profile on the crystal
 area. The combination of optimum
 thermal design and the application of
 gold sandwich metallization
 realizes excellent reliability
 properties.
  
 The transistor has a 1/4" capstan
 envelope with ceramic cap.  
 Page count File size (kB) Datasheet 
 
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