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			 Information as of 2000-01-10
 
				BLW96; HF/VHF power transistor 
 
  N-P-N silicon planar epitaxial
 transistor intended for use in class-A,
 AB and B operated high power
 industrial and military transmitting
 equipment in the h.f. and v.h.f. band.
 The transistor presents excellent
 performance as a linear amplifier in
 s.s.b. applications. It is resistance
 stabilized and is guaranteed to
 withstand severe load mismatch
 conditions. Transistors are supplied
 in matched hFE groups.
  
 The transistor has a 1/2" flange
 envelope with a ceramic cap. All
 leads are isolated from the flange.  
 Page count File size (kB) Datasheet 
 
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