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BUJ101A; Silicon Diffused Power Transistor

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Description

High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
BUJ101A	Silicon Diffused Power Transistor	01-Aug-98	Objective Specification	4	18	Open

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