Information as of 2000-01-10
   Latest information online  
			
				LLE18010X; NPN microwave power transistor
								 
			 
			
			 
			
 | Description |   |  
  
 
 NPN silicon planar epitaxial
 microwave power transistor in a
 SOT437A glued cap metal ceramic
 flange package, with emitter
 connected to flange.
  
 
   			
 | Features |   |  
  
 
 
 - Diffused emitter ballasting resistors
 providing excellent current sharing
 and withstanding a high VSWR
 
 - Interdigitated structure provides
 high emitter efficiency
 
 - Gold metallization realizes very
 good stability of the characteristics
 and excellent lifetime
 
 - Multicell geometry gives good
 balance of dissipated power and
 low thermal resistance
 
 - Internal input prematching ensures
 good stability and allows an easier
 design of wideband circuits.
 
  
  
 
   			
 | Applications |   |  
  
 
 Intended for use in common emitter,
 class AB amplifiers in CW conditions
 for professional applications up to
 2 GHz.
  
 
   			
 | Datasheet |   |  
 
 
 
			
 | Products, packages, availability and ordering |   |  
 
  Detailed discontinuation information Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability. 
 			
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