Information as of 2000-01-10
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LTE21009R; NPN microwave power transistor

• Description • Features • Applications • Datasheet • Products, packages, availability and ordering • Find similar products •

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Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Features

• Diffused emitter ballasting resistors
• Self-aligned process entirely ion implanted and gold sandwich metallization
• optimum temperature profile
• excellent performance and reliability
• Input matching cell improves input impedance and facilitates the design of wideband circuits.

Applications

• Common emitter class-A linear power amplifiers up to 4.2 GHz.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
LTE21009R	NPN microwave power transistor	19-Feb-97	Product Specification	8	55	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
LTE21009R	9337 831 60114	Standard marking * trade pack	SOT440	RFS

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

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