Information as of 2000-01-10
Latest information online
LTE42012R; NPN microwave power transistor
Description | ![Go to the top of this page](../images/main/top.gif) |
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
Features | ![Go to the top of this page](../images/main/top.gif) |
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics
and excellent lifetime
- Multicell geometry gives good balance of dissipated
power and low thermal resistance
- Input matching cell improves input impedance and
allows an easier design of wideband circuits.
Applications | ![Go to the top of this page](../images/main/top.gif) |
- Common emitter class-A power amplifiers up to 4.2 GHz
in CW conditions for military and professional
applications.
Datasheet | ![Go to the top of this page](../images/main/top.gif) |
Products, packages, availability and ordering | ![Go to the top of this page](../images/main/top.gif) |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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LTE42012R links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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