Information as of 2000-01-10
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MF1011B900Y; Microwave power transistor

• Description • Features • Applications • Datasheet • Products, packages, availability and ordering • Find similar products •

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Description

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.

Features

• Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure provides high emitter efficiency
• Gold metallization with barrier realizes very stable characteristics and excellent lifetime
• Multicell geometry improves power sharing and reduces thermal resistance
• Internal input and output prematching networks allow an easier design of circuits.

Applications

Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within this band.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
MF1011B900Y	Microwave power transistor	18-Feb-97	Product Specification	12	88	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
MF1011B900Y	9340 244 00114	Standard marking * trade pack	SOT448	RFS

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

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