Information as of 2000-01-10
   Latest information online  
			
				MX1011B200Y; Microwave power transistor
								 
			 
			
			 
			
 | Description |   |  
  NPN silicon planar epitaxial
 microwave power transistor in a
 SOT439A metal ceramic flange
 package, with base connected to
 flange.  			
 | Features |   |  
  
 - Suitable for short and medium
 pulse applications up to 100 µs
 pulse width, 10% duty factor
 
 - Diffused emitter ballasting resistors
 improve ruggedness
 
 - Interdigitated emitter-base
 structure provides high emitter
 efficiency
 
 - Gold metallization with barrier
 realizes very stable characteristics
 and excellent lifetime
 
 - Multicell geometry improves power
 sharing reduces thermal resistance
 
 - Internal input and output
 prematching networks allow an
 easier design of circuits.
 
    			
 | Applications |   |  
  Intended for use in common base
 class C broadband pulsed power
 amplifiers for IFF, TCAS and Mode S
 applications in the 1030 MHz to
 1090 MHz bandwidth. Also suitable
 for medium pulse, heavy duty
 operation within the 1030 MHz to
 1150 MHz bandwidth.  			
 | Datasheet |   |  
 
 
 
			
 | Products, packages, availability and ordering |   |  
 
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability. 
 			
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