Information as of 2000-01-10
Latest information online
MX1011B200Y; Microwave power transistor
Description |  |
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.
Features |  |
- Suitable for short and medium
pulse applications up to 100 µs
pulse width, 10% duty factor
- Diffused emitter ballasting resistors
improve ruggedness
- Interdigitated emitter-base
structure provides high emitter
efficiency
- Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
- Multicell geometry improves power
sharing reduces thermal resistance
- Internal input and output
prematching networks allow an
easier design of circuits.
Applications |  |
Intended for use in common base
class C broadband pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the 1030 MHz to
1090 MHz bandwidth. Also suitable
for medium pulse, heavy duty
operation within the 1030 MHz to
1150 MHz bandwidth.
Datasheet |  |
Products, packages, availability and ordering |  |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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MX1011B200Y links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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