Information as of 2000-01-10
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PTB23006U; Microwave power transistor

• Description • Features • Applications • Datasheet • Products, packages, availability and ordering • Find similar products

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Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

Features

• Very high power gain
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure
• Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
• Multicell geometry improves power sharing and reduces thermal resistance
• Internal input prematching network.

Applications

Intended for use in common-base, class C power amplifiers at frequencies up to 2.3 GHz.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
PTB23006U	Microwave power transistor	19-Feb-97	Preliminary Specification	12	88	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
PTB23006U	9339 681 70114	Standard marking * trade pack	SOT440	RFS	-

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

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