Information as of 2000-01-10
   Latest information online  
			
				RX1214B80W; RX1214B130Y; NPN microwave power transistors
								 
			 
			
			 
			
 | Description |   |  
  NPN silicon planar epitaxial
 microwave power transistor in a
 SOT439A metal ceramic flange
 package, with base connected to
 flange.  			
 | Features |   |  
  
 - Suitable for short and medium
 pulse applications up to 1 ms pulse
 width, 10% duty factor
 
 - Diffused emitter ballasting resistors
 improve ruggedness
 
 - Interdigitated emitter-base
 structure provides high emitter
 efficiency
 
 - Gold metallization with barrier
 realizes very stable characteristics
 and excellent lifetime
 
 - Multicell geometry improves power
 sharing and reduces thermal
 resistance
 
 - Internal input and output
 prematching networks allow an
 easier design of circuits.
 
    			
 | Applications |   |  
  Common-base class C broadband
 pulsed power amplifiers for radar
 applications in the 1.2 to 1.4 GHz
 band. Also suitable for long pulse,
 heavy duty operation within this band.  			
 | Datasheet |   |  
 
 
 
			
 | Products, packages, availability and ordering |   |  
 
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability. 
 			
 | Find similar products: |   |   
			  RX1214B80W; RX1214B130Y links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category. 
		
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