Information as of 2000-01-10
 Latest information online
RX1214B170W; Microwave power transistor
| Description |  |
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.
| Features | |
- Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor
- Diffused emitter ballasting resistors
improve ruggedness
- Interdigitated emitter-base
structure provides high emitter
efficiency
- Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
- Multicell geometry improves power
sharing and reduces thermal
resistance
- Internal input and output
prematching networks allow an
easier design of circuits.
| Applications | |
Intended for use in common-base
class C broadband pulsed power
amplifiers for radar applications in the
1.2 to 1.4 GHz band. Also suitable for
long pulse, heavy duty operation
within this band.
| Datasheet | |
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