Information as of 2000-01-10
 Latest information online
RX1214B350Y; NPN microwave power transistor
| Description |  |
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to
flange.
| Features | |
- Suitable for short and medium
pulse applications up to 1 ms/10%
- Internal input prematching
networks allow an easier design of
circuits
- Diffused emitter ballasting resistors
improve ruggedness
- Interdigitated emitter-base
structure provides high emitter
efficiency
- Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
- Multicell geometry improves power
sharing and reduces thermal
resistance.
| Applications | |
Common base, class C, broadband,
pulsed power amplifiers for L-Band
radar applications in the
1.2 to 1.4 GHz band. Also suitable for
medium pulse, heavy duty operation
within this band.
| Datasheet | |
| Products, packages, availability and ordering | |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.
| Find similar products: | |
RX1214B350Y links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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