Information as of 2000-01-10
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RZ1214B35Y; NPN microwave power transistor

• Description • Features • Applications • Datasheet • Products, packages, availability and ordering • Find similar products

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Description

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

Features

• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Internal input matching ensures good stability and allows an easier design of wideband circuits.

Applications

· Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
RZ1214B35Y	NPN microwave power transistor	18-Feb-97	Product Specification	8	69	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
RZ1214B35Y	9337 830 40114	Standard marking * trade pack	SOT443	RFS	-

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

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