Philips Semiconductors' new SiliconMAX™ power MOSFET range - a next generation development of the company's advanced TrenchMOS technology - brings the benefits of ultra-low R_DS(on) and high-speed switching to applications requiring transistors with voltage ratings up to 200V.

Key benefits

• Lower R_DS(on) for the same size transistor package
• Smaller package size for the same R_DS(on) value and/or reduced component count
• High-speed, low-loss switching performance
• Replacement of through-hole mounting power packages with surface-mount devices
• Reduced heatsinking requirement
• Lower system cost and higher performance

Features

• Voltage ratings of 25V, 55V, 100V, 150V and 200V
• Comprehensive range of D²-PAK, D-PAK, TO220AB and TO247 package options
• R_DS(on) values as low as 15 mW
• Very low gate-charge

SiliconMAX
Fulfilling Philips' EcoVision for a less power-hungry world